SI4464DY Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

Si4464DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8
50
0.4
40
I_D = 250 mA
0.0
30
-0.4
20
Single Pulse Power
-0.8
10
-1.2
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.001 0.01
0.1
1
Time (sec)
r_DS(on) Limited
10
I_D(on)
Limited
1
Safe Operating Area
0.1
T_A = 25_C
Single Pulse
0.01
I_DM Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.001
0.1
BV_DSS Limited
1
10
100
V_DS - Drain-to-Source Voltage (V)
1000
10
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1 ^0.1
0.05
0.02
Single Pulse
0.01
10^{- 4}
10^{- 3}
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4
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 68_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 72051
S-22099—Rev. A, 02-Dec-02