SI4464DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

New Product
N-Channel 200-V (D-S) MOSFET
Si4464DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
200
r_DS(on) (W)
0.240 @ V_GS = 10 V
0.260 @ V_GS = 6.0 V
I_D (A)
2.2
2.1
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized for (Lowest Q_g and Low R_G)
APPLICATIONS
D Primary Side Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Single Avalanch Current
Single Avalanch Energy
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
I_S
P_D
T_J, T_stg
200
"20
2.2
1.7
1.7
1.3
8
3
0.45
2.1
1.2
2.5
1.5
1.6
0.9
-55 to 150
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72051
S-22099—Rev. A, 02-Dec-02
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
37
68
17
Maximum
50
85
21
Unit
_C/W
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