SI4464DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

New Product
Si4464DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.4
800
Capacitance
0.3
V_GS = 6 V
0.2
C_iss
600
400
V_GS = 10 V
0.1
0.0
0
2
4
6
8
I_D - Drain Current (A)
Gate Charge
10
V_DS = 100 V
I_D = 2.2 A
8
200
C_rss
C_oss
0
0
20
40
60
80
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
V_GS = 10 V
I_D = 2.2 A
2.0
6
1.5
4
1.0
2
0.5
0
0
3
6
9
12
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
0.0
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.5
T_J = 150_C
1
T_J = 25_C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Document Number: 72051
S-22099—Rev. A, 02-Dec-02
0.4
0.3
0.2
0.1
0.0
0
I_D = 2.2 A
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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