SI4464DY Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

Si4464DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 160 V, V_GS = 0 V
V_DS = 160 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 2.2 A
V_GS = 6.0 V, I_D = 2.1 A
V_DS = 15 V, I_D = 2.2 A
I_S = 2.1 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_G
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 100 V, V_GS = 10 V, I_D = 2.2 A
V_DD = 100 V, R_L = 100 W
I_D ^ 1.0 A, V_GEN = 10 V, R_G = 6 W
I_F = 2.1 A, di/dt = 100 A/ms
Min Typ Max Unit
2.0
4
V
"100
nA
1
mA
5
8
A
0.195
0.240
W
0.210
0.260
8.0
S
0.8
1.2
V
12
18
2.5
nC
3.8
2.5
W
10
15
12
20
15
25
ns
15
25
60
90
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
V_GS = 10 thru 5 V
6
Transfer Characteristics
8
6
4
2
0
0
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2
4V
3V
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
4
T_C = 125_C
2
25_C
-55 _C
0
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Document Number: 72051
S-22099—Rev. A, 02-Dec-02