SI4447DY Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

Si4447DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
50
0.4
I_D = 250 µA
40
0.2
30
0.0
20
- 0.2
10
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0.001 0.01
0.1
1
10
100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
I_DM Limited
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
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4
1
I_D(on)
Limited
0.1
T_A = 25 °C
Single Pulse
0.01
BV_DSS Limited
1 ms
10 ms
100 ms
1s
10 s
DC
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 65 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09