SI4447DY Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

Si4447DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
0.08
0.06
V_GS = 4.5 V
0.04
V_GS = 10 V
0.02
0.00
0
4
8
12
16
20
1240
1116
992
868
C_iss
744
620
496
372
248
C_oss
124
C_rss
0
0 5 10 15 20 25 30 35 40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
V_DS - Drain-to-Source Voltage (V)
Capacitance
6
I_D = 4.5 A
5
1.8
V_GS = 10 V
1.6
I_D = 4.5 A
4
3
2
1
0
0
20
V_DS = 10 V
V_DS = 20 V
2
4
6
8
10
12
Q_g - Total Gate Charge (nC)
Gate Charge
10
T_J = 150 °C
T_J = 25 °C
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.30
I_D = 4.5 A
0.25
0.20
0.15
0.10
T_A = 125 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.05
T_A = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
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