SI4447DY Datasheet, PDF (2/6 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

Si4447DY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate-Source Threshold Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Leakage
V_GS(th)
ΔV_DS/T_J
ΔV_GS(th)/T_J
I_GSS
Zero Gate Voltage Drain Current
I_DSS
On-State Drain Current^a
I_D(on)
Drain-Source On-State Resistance^a
R_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off DelayTime
t_d(off)
Fall Time
t_f
Source-Drain Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = - 250 µA
I_D = - 250 µA
V_DS = 0 V, V_GS = ± 16 V
V_DS = - 40 V, V_GS = 0 V
V_DS = - 40 V, V_GS = 0 V, T_J = 55 °C
V_DS ≤ - 5 V, V_GS = - 10 V
V_GS = - 10 V, I_D = - 4.5 A
V_GS = - 15 V, I_D = - 4.5 A
V_DS = - 15 V, I_D = - 4.5 A
I_S = - 1.7 A, V_GS = 0 V
V_DS = - 20 V, V_GS = 0 V, f = 1 MHz
V_DS = - 20 V, V_GS = - 4.5 V, I_D = - 4.5 A
f = 1 MHz
V_DD = - 15 V, R_L = 15 Ω
I_D ≅ - 1 A, V_GEN = - 10 V, R_g = 6 Ω
I_F = 1.7 A, dI/dt = 100 A/µs
Min.
- 0.8
- 20
Typ.
- 40
3.4
0.045
0.059
13
- 0.79
805
120
85
9
2
3.6
11.5
8
12
74
38
27
17
Max.
Unit
- 2.2
± 100
-1
- 10
0.054
0.072
- 1.2
V
mV/°C
nA
µA
A
Ω
S
V
pF
14
nC
18
Ω
13
18
110
ns
60
45
26
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
V_GS = 10 V thru 4 V
16
16
12
12
3V
8
8
T_C = - 55 °C
25 °C
125 °C
4
4
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
www.vishay.com
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09