SI4447DY Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

P-Channel 40-V (D-S) MOSFET
Si4447DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 40
0.054 at V_GS = - 10 V
0.072 at V_GS = - 4.5 V
I_D (A)
- 4.5
- 3.9
Q_g (Typ.)
9
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
APPLICATIONS
• CCFL Inverter
S
G
Top View
Ordering Information: Si4447DY-T1-E3 (Lead (Pb)-free)
Si4447DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 40
V
V_GS
± 16
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
- 4.5
- 3.6
- 3.3
- 2.7
Pulsed Drain Current
I_DM
- 30
A
Continuous Source Current (Diode Conduction)^a
I_S
- 1.7
- 0.9
Avalanche Current
Single Pulse Avalanche Energy
I_AS
16
L = 0.1 mH
E_AS
13
mJ
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
2
1.1
1.3
0.7
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
50
85
30
Maximum
62.5
110
40
Unit
°C/W
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
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