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SI4433DY Datasheet, PDF (4/4 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET | |||
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Si4433DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
Single Pulse Power
0.3
40
ID = 250 mA
0.2
30
0.1
20
0.0
10
â0.1
â0.2
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
0
10â3
10â2
10â1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 0.05
0.02
0.01
10â4
Single Pulse
10â3
2
1
Duty Cycle = 0.5
10â2
10â1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 75_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.01
10â4
0.02
Single Pulse
10â3
10â2
10â1
1
Square Wave Pulse Duration (sec)
10
100
www.vishay.com
4
Document Number: 71663
S-04245âRev. A, 16-Jul-01
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