SI4433DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

Si4433DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = –16 V, V_GS = 0 V
V_DS = –16 V, V_GS = 0 V, T_J = 85_C
V_DS p –5 V, V_GS = –4.5 V
V_GS = –4.5 V, I_D = –2.7 A
V_GS = –2.5 V, I_D = –2.2 A
V_GS = –1.8 V, I_D = –1 A
V_DS = –10 V, I_D = –2.7 A
I_S = –0.9 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = –10 V, V_GS = –4.5 V, I_D = –2.7 A
V_DD = –10 V, R_L = 10 W
I_D ^ –1 A, V_GEN = –4.5 V, R_G = 6 W
I_F = –0.9 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min
Typ
Max Unit
–0.45
V
"100
nA
–1
mA
–5
–10
A
0.095
0.110
0.137
0.160
W
0.205
0.240
7
S
–0.8
–1.2
V
4.4
6.5
1.4
nC
0.65
16
25
30
45
30
45
ns
27
40
20
40
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V_GS = 5 thru 3 V
2.5 V
8
6
2V
4
2
1.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS – Drain-to-Source Voltage (V)
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2
Transfer Characteristics
10
T_C = –55_C
8
25_C
6
125_C
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
Document Number: 71663
S-04245—Rev. A, 16-Jul-01