SI4433DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

New Product
Si4433DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.6
800
V_GS = 1.8 V
0.5
600
0.4
Capacitance
C_iss
0.3
0.2
V_GS = 2.5 V
V_GS = 4.5 V
0.1
0.0
0
2
4
6
8
10
I_D – Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 2.7 A
4
400
200
C_oss
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 2.7 A
1.4
3
1.2
2
1.0
1
0.8
0
0
1
2
3
4
5
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
T_J = 150_C
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.4
I_D = 2.7 A
0.3
0.2
T_J = 25_C
0.1
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Document Number: 71663
S-04245—Rev. A, 16-Jul-01
0.0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
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