SI4433DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

New Product
P-Channel 1.8-V (G-S) MOSFET
Si4433DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.110 @ V_GS = –4.5 V
–20
0.160 @ V_GS = –2.5 V
0.240 @ V_GS = –1.8 V
I_D (A)
–3.9
–3.2
–2.6
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
FEATURES
D TrenchFETr Power MOSFET
D Fast Switching
APPLICATION
D DC-DC Conversion
D Asynchronous Buck Converter
D Voltage Inverter
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
–20
V_GS
"8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
I_D
I_DM
I_S
P_D
T_J, T_stg
–3.9
–2.9
–2.8
–2.1
–10
–2.1
–1.2
2.5
1.4
1.3
0.7
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71663
S-04245—Rev. A, 16-Jul-01
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
40
75
19
Maximum
50
90
25
Unit
_C/W
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