SI4412DY-T1-E3 Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Rated MOSFET

Si4412DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
0.10
10
T _J = 150 °C
T_J = 25 °C
0.08
0.06
0.04
I_D = 7 A
0.02
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
I_D = 250 µA
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25
2
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
1
Duty Cycle = 0.5
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.01
0.10
1.00
10.00
Time (s)
Single Pulse Power
0.2
0.1
0.1
0.05
0.02
0.01
10 ^-4
Single Pulse
10 ^-3
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 50 °C/W
3. T_JM - TA = P _DMZ_thJA^(t)
4. Surface Mounted
10 ^-2
10 ^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
30
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70154.
www.vishay.com
4
Document Number: 70154
S09-0705-Rev. D, 27-Apr-09