SI4412DY-T1-E3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Rated MOSFET

Si4412DY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 7.0 A
V_GS = 4.5 V, I_D = 3.5 A
V_DS = 15 V, I_D = 7.0 A
Diode Forward Voltage^b
V_SD
I_S = 2 A, V_GS = 0 V
Dynamic^a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 15 V, V_GS = 10 V, I_D = 2 A
V_DD = 25 V, R_L = 25 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
I_F = 2 A, dI/dt = 100 A/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Min.
Typ.^a
Max.
Unit
1.0
V
± 100
nA
2
µA
25
30
A
0.021
0.028
Ω
0.030
0.042
16
S
0.75
1.1
V
19.5
29
3.4
nC
2.7
9
15
12
20
38
55
ns
19
28
45
80
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70154
S09-0705-Rev. D, 27-Apr-09