SI4412DY-T1-E3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Rated MOSFET

Si4412DY
Vishay Siliconix
N-Channel 30-V (D-S) Rated MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.028 at V_GS = 10 V
0.042 at V_GS = 4.5 V
I_D (A)
± 7.0
± 5.8
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4412DY-T1-E3 (Lead (Pb)-free)
Si4412DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
Pulsed Drain Current
I_DM
Continuous Source Current (Diode Conduction)^a
I_S
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
30
± 20
± 7.0
± 5.8
± 30
2.3
2.5
1.6
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol
R_thJA
Limit
50
Unit
V
A
W
°C
Unit
°C/W
Document Number: 70154
S09-0705-Rev. D, 27-Apr-09
www.vishay.com
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