SI4412DY-T1-E3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Rated MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
V_GS = 10 V, 9 V, 8 V, 7 V, 6 V, 5 V
24
4V
24
Si4412DY
Vishay Siliconix
18
18
12
12
6
0
0
0.05
0.04
0.03
0.02
3V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
V_GS = 4.5 V
V_GS = 10 V
6
0
0
1500
1200
T_C = 125 °C
25 °C
- 55 °C
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
900
C_oss
600
0.01
0
0
6
12
18
24
30
I _D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
8
I_D = 2 A
6
300
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
V_GS = 10 V
1.6
I_D = 7 A
1.2
4
0.8
2
0.4
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 70154
S09-0705-Rev. D, 27-Apr-09
0
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3