IRF9530S Datasheet, PDF (4/8 Pages) Vishay Siliconix – Repetitive avalanche rated

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10¹
175 °C
25 °C
10⁰
10^-1
1.0
91076_07
V_GS = 0 V
2.0
3.0
4.0
5.0
- V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10³
5
Operation in this area limited
by R_DS(on)
2
10²
5
10 µs
2
100 µs
10
1 ms
5
2
1
5
2
0.1
0.1 ²
10 ms
T_C = 25 °C
T_J = 175 °C
Single Pulse
5 ₁ 2 5 ₁₀ 2
5 ₁₀₂ 2
5 ₁₀₃
91077_08
- V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10
IRF9530S, SiHF9530S
Vishay Siliconix
12
10
8
6
4
2
0
25
91077_09
50
75 100 125 150 175
T_C, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
V_DS
V_GS
R_g
R_D
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+V_DD
Fig. 10a - Switching Time Test Circuit
V_GS
10 %
t_d(on) t_r
t_d(off) t_f
90 %
V_DS
Fig. 10b - Switching Time Waveforms
1 _{D = 0.5}
0.2
0.1
0.1 ^0.05
0.02
0.01
10^-2
10^-5
91077_11
Single Pulse
(Thermal Response)
10^-4
10^-3
10^-2
0.1
t₁, Rectangular Pulse Duration (s)
P_DM
t₁
t₂
Notes:
1. Duty Factor, D = t₁/t₂
2. Peak T_j = P_DM x Z_thJC + T_C
1
10
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0754-Rev. D, 02-May-16
4
Document Number: 91077
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