IRF9530S Datasheet, PDF (1/8 Pages) Vishay Siliconix – Repetitive avalanche rated

www.vishay.com
IRF9530S, SiHF9530S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g max. (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
-100
V_GS = -10 V
38
6.8
21
Single
0.30
S
D²PAK (TO-263)
G
GD
S
D
P-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• P-channel
• 175 °C operating temperature
Available
• Fast switching
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D²PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D²PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D²PAK (TO-263)
SiHF9530S-GE3
IRF9530SPbF
SiHF9530S-E3
D²PAK (TO-263)
SiHF9530STRL-GE3 ^a
IRF9530STRLPbF ^a
SiHF9530STL-E3 ^a
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^a
Linear Derating Factor
Linear Derating Factor (PCB mount) ^e
Single Pulse Avalanche Energy ^b
Avalanche Current ^a
Repetitive Avalanche Energy ^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) ^e
Peak Diode Recovery dV/dt ^c
V_DS
V_GS
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) ^d
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = -25 V, starting T_J = 25 °C, L = 4.2 mH, R_g = 25 , I_AS = -12 A (see fig. 12).
c. I_SD  - 12 A, dI/dt  140 A/μs, V_DD  V_DS, T_J  175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
D²PAK (TO-263)
SiHF9530STRR-GE3 ^a
IRF9530STRRPbF ^a
SiHF9530STR-E3 ^a
LIMIT
-100
± 20
-12
-8.2
-48
0.59
0.025
400
-12
8.8
88
3.7
- 5.5
-55 to +175
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S16-0754-Rev. D, 02-May-16
1
Document Number: 91077
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000