IRF9530S Datasheet, PDF (3/8 Pages) Vishay Siliconix – Repetitive avalanche rated

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF9530S, SiHF9530S
Vishay Siliconix
V_GS
Top - 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
10¹
- 5.0 V
Bottom - 4.5 V
- 4.5 V
10⁰
10^-1
91077_01
20 µs Pulse Width
T_C = 25 °C
10⁰
10¹
- V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T_C = 25 °C
V_GS
Top
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
10¹
- 5.5 V
- 5.0 V
Bottom - 4.5 V
- 4.5 V
10⁰
10^-1
91077_02
20 µs Pulse Width
T_C = 175 °C
10⁰
10¹
- V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T_C = 175 °C
25 °C
10¹
175 °C
10⁰
4
91077_03
20 µs Pulse Width
V_DS = - 50 V
5
6
7
8
9
10
- V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0
I_D = - 12 A
V_GS = - 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60- 40 - 20 0 20 40 60 80 100 120 140 160 180
91077_04
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
1800
1500
1200
900
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
600
C_oss
300
C_rss
0
10⁰
91077_05
10¹
- V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20 _{ID = - 12 A}
16
V_DS = - 80 V
V_DS = - 50 V
12
V_DS = - 20 V
8
4
0
0
91077_06
For test circuit
see figure 13
10
20
30
40
50
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S16-0754-Rev. D, 02-May-16
3
Document Number: 91077
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