IRF820S Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)

www.vishay.com
IRF820S, SiHF820S, IRF820L, SiHF820L
Vishay Siliconix
10⁰ _{150 °C}
25 °C
V_GS = 0 V
0.4
0.6
0.8
1.0
1.2
91060_07
V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10²
5
2
10
5
2
1
5
2
0.1
5
2
10^-2
0.1 ²
Operation in this area limited
by R_DS(on)
10 µs
100 µs
1 ms
10 ms
5₁ 2
T_C = 25 °C
T_J = 150 °C
Single Pulse
5 ₁₀ 2 5 ₁₀₂ 2
5 ₁₀₃ 2
5 ₁₀₄
91060_08
V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
91060_09
T_C, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
V_DS
V_GS
R_g
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- _VDD
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
D = 0.5
1
0.2
0.1
0.05
0.1 _0.02
0.01
Single Pulse
(Thermal Response)
10^-2
10^-5
10^-4
10^-3
10^-2
P_DM
t₁
t₂
Notes:
1. Duty Factor, D = t₁/t₂
2. Peak T_j = P_DM x Z_thJC + T_C
0.1
1
10
91060_11
t₁, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S15-1659-Rev. D, 20-Jul-15
4
Document Number: 91060
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000