IRF820S Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)

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IRF820S, SiHF820S, IRF820L, SiHF820L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
V_GS
Top 15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10⁰
4.5 V
10^-1
10⁰
20 µs Pulse Width
T_C = 25 °C
10¹
91060_01
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T_C = 25 °C
V_GS
Top 15 V
10 V
8.0 V
7.0 V
6.0 V
10⁰
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
10^-1
10⁰
20 µs Pulse Width
T_C = 150 °C
10¹
91060_02
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T_C = 150 °C
150 °C
10⁰
25 °C
3.0
I_D = 2.1 A
V_GS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91060_04
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
800
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
600
C_oss = C_ds + C_gd
C_iss
400
C_oss
200
0
10⁰
C_rss
10¹
91060_05
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20 _{ID = 2.1 A}
16
V_DS = 400 V
V_DS = 250 V
12
V_DS = 100 V
8
10^-1
20 µs Pulse Width
V_DS = 50 V
4
5
6
7
8
9
10
91060_03
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
4
For test circuit
see figure 13
0
0
4
8
12
16
20
24
91060_06
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S15-1659-Rev. D, 20-Jul-15
3
Document Number: 91060
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