IRF820S Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)

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IRF820S, SiHF820S, IRF820L, SiHF820L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
500
V_GS = 10 V
3.0
24
3.3
13
Single
D
I²PAK (TO-262)
D²PAK (TO-263)
G
DS
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
Available
• Repetitive avalanche rated
• Fast switching
Available
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D²PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D²PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D²PAK (TO-263)
SiHF820S-GE3
IRF820SPbF
D²PAK (TO-263)
SiHF820STRL-GE3 ^a
IRF820STRLPbF ^a
D²PAK (TO-263)
SiHF820STRR-GE3 ^a
IRF820STRRPbF ^a
I²PAK (TO-262)
SiHF820L-GE3
IRF820LPbF
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^a
Linear Derating Factor
Linear Derating Factor (PCB mount) ^e
Single Pulse Avalanche Energy ^b
Avalanche Current ^a
Repetitive Avalanche Energy ^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) ^e
Peak Diode Recovery dV/dt ^c
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) ^d
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, starting T_J = 25 °C, L = 60 mH, R_g = 25 , I_AS = 2.5 A (see fig. 12).
c. I_SD  2.5 A, dI/dt  50 A/μs, V_DD  V_DS, T_J  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
500
± 20
2.5
1.6
8.0
0.40
0.025
210
2.5
5.0
50
3.1
3.5
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S15-1659-Rev. D, 20-Jul-15
1
Document Number: 91060
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000