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| IRF820S Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A) | |||
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www.vishay.com
IRF820S, SiHF820S, IRF820L, SiHF820L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient ï
(PCB mount) a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ïVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.5 Ab
VDS = 50 V, ID = 1.5 Ab
500
-
-
V
-
0.59
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
3.0
ï
1.5
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
-
VGS = 10 V
ID = 2.1 A, VDS = 400 V,
see fig. 6 and 13b
-
-
-
VDD = 250 V, ID = 2.1 A,
-
Rg = 18 ï, RD = 100 ï, see fig. 10b
-
-
Between lead,ï
6 mm (0.25") from
D
-
package and center of
G
die contact
-
S
360
-
92
-
pF
37
-
-
24
-
3.3
nC
-
13
8.0
-
8.6
-
ns
33
-
16
-
4.5
-
nH
7.5
-
Continuous Source-Drain Diode Current
IS
MOSFET symbolï
showing the ï
Pulsed Diode Forward Currenta
integral reverseï
ISM
p - n junction diode
D
G
S
-
-
2.5
A
-
-
8.0
Body Diode Voltage
VSD
TJ = 25 °C, IS = 2.5 A, VGS = 0 Vb
-
-
1.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
-
260
520
ns
TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μsb
-
0.70 1.4
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ï£ 300 μs; duty cycle ï£ 2 %.
S15-1659-Rev. D, 20-Jul-15
2
Document Number: 91060
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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