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72399 Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET
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Si7411DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power, Juncion-to-Ambient
50
0.3
ID = 300 mA
40
0.2
30
0.1
20
0.0
−0.1
10
−0.2
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
0.01
0.1
Safe Operating Area
100
rDS(on) Limited
IDM Limited
1
10
Time (sec)
100
600
10
1
ID(on)
Limited
0.1
TA = 25_C
Single Pulse
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
BVDSS Limited
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
www.vishay.com
4
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Document Number: 72399
S-40763—Rev. C, 19-Apr-04
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