72399 Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si7411DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
4000
Capacitance
0.08
0.06
3200
C_iss
2400
0.04
0.02
0.00
0
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
5
10
15
20
25
30
I_D − Drain Current (A)
Gate Charge
5
V_DS = 10 V
4
I_D = 11.4 A
3
2
1
0
0
5
10
15
20
25
30
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
T_J = 150_C
10
T_J = 25_C
1600
800
C_rss
0
0
4
C_oss
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.5
1.4
V_GS = 4.5 V
I_D = 11.4 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
I_D = 2.9 A
I_D = 11.4 A
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
Document Number: 72399
S-40763—Rev. C, 19-Apr-04
0.00
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
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3