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72399 Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET | |||
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Si7411DN
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = â300 mA
VDS = 0 V, VGS = "8 V
VDS = â20 V, VGS = 0 V
VDS = â20 V, VGS = 0 V, TJ = 85_C
VDS v â5 V, VGS = â4.5 V
VGS = â4.5 V, ID = â11.4 A
VGS = â2.5 V, ID = â9.9 A
VGS = â1.8 V, ID = â2.9 A
VDS = â15 V, ID = â11.4 A
IS = â3.0 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = â10 V, VGS = â4.5 V, ID = â11.4 A
f = 1 MHz
VDD = â10 V, RL = 10 W
ID ^ â1 A, VGEN = â4.5 V, Rg = 6 W
IF = â3.2 A, di/dt = 100 A/ms
Min
â0.4
â30
Typ Max Unit
â1.0
V
"100
nA
â1
mA
â5
A
0.015
0.019
0.020
0.025
W
0.027
0.034
35
S
â0.8
â1.2
V
27
41
3.9
nC
7
5
W
23
35
45
70
135
200
ns
70
105
29
50
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
VGS = 5 thru 2 V
25
20
15
10
1.5 V
5
0
0
www.vishay.com
2
1V
1
2
3
4
5
VDS â Drain-to-Source Voltage (V)
30
25
20
15
10
5
0
0.0
Transfer Characteristics
TC = 125_C
25_C
â55_C
0.5
1.0
1.5
2.0
2.5
VGS â Gate-to-Source Voltage (V)
Document Number: 72399
S-40763âRev. C, 19-Apr-04
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