72399 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET
Si7411DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.019 @ V_GS = −4.5 V
−20
0.025 @ V_GS = −2.5 V
0.034 @ V_GS = −1.8 V
I_D (A)
−11.4
−9.9
−8.5
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D New PowerPAKr Package
− Low Thermal Resistance, R_thJC
− Low 1.07-mm Profile
APPLICATIONS
D Load Switch
PowerPAKr 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7411DN-T1—E3
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−20
"8
−11.4
−7.5
−8.2
−5.4
−30
−3
−1.3
3.6
1.5
1.9
0.8
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72399
S-40763—Rev. C, 19-Apr-04
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
28
65
2.9
Maximum
35
81
3.8
Unit
_C/W
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