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71108 Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET
◁
Si3454ADV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
Single Pulse Power
0.2
40
ID = 250 mA
−0.0
30
−0.2
20
−0.4
10
−0.6
−0.8
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
10−3
10−2
10−1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = _C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
www.vishay.com
4
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71108
S-40424—Rev. C, 15-Mar-04