71108 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si3454ADV
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 70_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 4.5 A
V_GS = 4.5 V, I_D = 3.8 A
V_DS = 10 V, I_D = 4.5 A
I_S = 1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 15 V, V_GS = 10 V, I_D = 4.5 A
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_g = 6 W
I_F = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0
3.0
V
"100
nA
1
mA
25
15
A
0.048
0.060
W
0.070
0.085
10
S
0.8
1.2
V
9
15
2.5
nC
1.5
0.5
2.9
W
10
20
10
20
20
35
ns
7
15
40
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V_GS = 10 thru 5 V
16
4V
12
8
4
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS − Drain-to-Source Voltage (V)
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2
Transfer Characteristics
20
T_C = −55_C
16
25_C
125_C
12
8
4
0
0
1
2
3
4
5
6
V_GS − Gate-to-Source Voltage (V)
Document Number: 71108
S-40424—Rev. C, 15-Mar-04