71108 Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si3454ADV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
600
Capacitance
0.15
500
C_iss
400
0.10
0.05
V_GS = 4.5 V
V_GS = 10 V
0.00
0
4
8
12
16
20
I_D − Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 4.5 A
8
6
4
2
300
200
C_oss
100
C_rss
0
0
6
12
18
24
30
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 4.5 A
1.4
1.2
1.0
0.8
0
0
2
4
6
8
10
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.15
I_D = 4.5 A
0.10
T_J = 25_C
0.05
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
Document Number: 71108
S-40424—Rev. C, 15-Mar-04
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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