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71108 Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET
N-Channel 30-V (D-S) MOSFET
Si3454ADV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
30
0.060 @ VGS = 10 V
0.085 @ VGS = 4.5 V
ID (A)
4.5
3.8
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3454ADV-T1
Si3454ADV-T1—E3 (Lead Free)
Marking Code:
A4xxx
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
4.5
3.4
3.6
2.7
20
1.7
1.0
2.0
1.14
1.3
0.73
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71108
S-40424—Rev. C, 15-Mar-04
Symbol
RthJA
RthJF
Typical
50
90
30
Maximum
62.5
110
36
Unit
_C/W
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