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SI9750 Datasheet, PDF (2/9 Pages) Vishay Siliconix – In-Rush Current Limit MOSFET Driver
Si9750
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to Ground
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V
Boost Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 V
Inputs/Outputs
(except Gate, Boost and VRST) . . . . . . . . . . . . . . . -0.3 to VDD + 0.3 V
VRST Input Current (0 < VRST < 15 V) . . . . . . . . . . . . . . . . . . . .20 mA
Inputs/Outputs Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mA
RESET Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 mA
STATUS Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 mA
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Power Dissipation (package)a
16-Pin SOICb. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
Thermal Impedance (ΘJA) . . . . . . . . . . . . . . . . . . . . . . . . . . . 140°C/W
Notes
a. Device mounted with all leads soldered or welded to PC board.
b. Derate 7.2 mW/°C above 25°C.
* Exposure to Absolute Maximum rating conditions for extended periods may affect device reliability. Stresses above Absolute Maximum rating may cause
permanent damage. Functional operation at conditions other than the operating conditions specified is not implied. Only one Absolute Maximum rating should be
applied at any one time
SPECIFICATIONS
Parameter
Supply
Quiescent Current
Logic
Enable Turn-On Voltage
Enable Turn-Off Voltage
Enable Source Current
Turn-On Time
Turn-Off Time
Turn-On Boost
tOFF Initial Short Circuit
tOFF Short Circuit
Status Output Voltage
Status Output Delay Time
Status Threshold
HI/LO Turn-On Voltage
HI/LO Turn-Off Voltage
Gate Drive
Enhancement Voltage
(VGATE - VSENSE)
Source Current
Sink Current
Symbol
Test Conditions
Unless Otherwise Specified
2.9 V ≤ VDD ≤ 13.2 V
HI/LO = GND, RBIAS = 12.5 kΩ
LBOOST = 100 µH, CBOOST = 100 nF
Mina
Limits
0 to 70°C
Typb
Maxa
Unit
IQ
VEN(on)
VEN(off)
IENSRC
tON
tOFF
tON(BST)
tOFF(ISC)
tOFF(SC)
VSTAT
tSTDLY
VSTATTHR
VHILO(on)
VHILO(off)
ENABLE = Logic Low
4
8
mA
VENABLE = 0V
See Figure 3.
See Figure 4.
CGATE = 33 nF, See Figure 6.
CGATE = 33 nF, See Figure 7.
ISINK = 200 µA
See Figure 8.
0.7 x VDD
40
0.85 x VDD
0.7 x VDD
0.3 x VDD
V
120
µA
5
5
600
µs
10
2
0.4
V
µs
0.95 x VDD
V
0.3 x VDD
VGS
ISOURCE
ISINK
VCBOOST = 9 V
8.5
1.06
1.6
10.5
1.30
2.6
15
V
1.54
mA
3.7
S-60752—Rev. C, 05-Apr-99
2
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