V23990-P629-L59-PM Datasheet, PDF (9/19 Pages) Vincotech – Ultra fast switching frequency

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
10
8
6
4
2
0
0
At
20
40
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
700
V
15
V
4
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
100
80
60
40
20
0
0
20
40
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
700
V
15
V
4
Ω
INPUT BOOST
V23990-P629-L59-PM
preliminary datasheet
BOOST FWD
Q_{rr High T}
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
10
8
6
Q_{rr Low T}
4
2
0
60
I C (A)
80
0
16
32
48
At
T_j =
VR =
IF =
VGS =
25/125 °C
700
V
24
A
15
V
BOOST FWD
I_{RRM High T}
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
100
80
60
40
20
0
60
I C (A)
80
0
16
32
48
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
700
V
24
A
15
V
BOOST FWD
Q_{rr High T}
Q_{rr Low T}
64
R Gon ( Ω) ⁸⁰
BOOST FWD
I_{RRM High T}
I_{RRM Low T}
64 _{R Gon ( Ω )} 80
copyright Vincotech
9
Revision: 1