V23990-P629-L59-PM Datasheet, PDF (8/19 Pages) Vincotech – Ultra fast switching frequency

Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
10
1
t_doff
0,1
t_f
t_don
0,01
t_r
0,001
0
20
40
With an inductive load at
T_j =
125
°C
V_DS =
700
V
V_GS =
15
V
R_gon =
4
Ω
R_goff =
4
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(I_C)
0,6
0,5
0,4
0,3
0,2
0,1
0
0
20
40
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
700
V
15
V
4
Ω
V23990-P629-L59-PM
preliminary datasheet
INPUT BOOST
BOOST IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
10
1
0,1
0,01
BOOST IGBT
t_doff
t_don
t_r
t_f
60
I C (A)
80
0,001
0
16
32
48
64 _{R G( Ω )} 80
With an inductive load at
T_j =
125
°C
V_DS =
700
V
V_GS =
15
V
I_C =
24
A
BOOST FWD
t_{rr High T}
t_{rr Low T}
60
I C (A)
80
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0
16
32
48
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
700
V
24
A
15
V
BOOST FWD
t_{rr High T}
t_{rr Low T}
64 _{R Gon ( Ω )} 80
copyright Vincotech
8
Revision: 1