V23990-P629-L59-PM Datasheet, PDF (5/19 Pages) Vincotech – Ultra fast switching frequency

V23990-P629-L59-PM
preliminary datasheet
Boost IGBT Protection Diode
Figure 1
Typical FWD forward current as
a function of forward voltage
I_F = f(V_F)
20
15
10
Boost IGBT Protection Diode
T_j = 25°C
T_j = T_jmax-25°C
5
0
0
1
2
At
t_p =
250
µs
3
V F (V)
4
Figure 2
Diode transient thermal impedance
as a function of pulse width
Z_thJH = f(t_p)
10¹
Boost IGBT Protection Diode
10⁰
D = 0,5
0,2
10^-1
0,1
0,05
0,02
0,01
0,005
0.000
10^-2
10^-5
10^-4
10^-3
10^-2
10^-1
10^{0 t} p ^(s)
10¹10
At
D=
R_thJH =
tp / T
2,72
K/W
Figure 3
Power dissipation as a
function of heatsink temperature
P_tot = f(T_h)
60
Boost IGBT Protection Diode
Figure 4
Forward current as a
function of heatsink temperature
I_F = f(T_h)
20
Boost IGBT Protection Diode
45
15
30
10
15
5
0
0
50
100
At
T_j =
150
ºC
0
150
Th ( ^o C) 200
0
50
100
At
T_j =
150
ºC
150
Th ( ^o C)
200
copyright Vincotech
5
Revision: 1