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| V23990-P629-L59-PM Datasheet, PDF (10/19 Pages) Vincotech – Ultra fast switching frequency | |||
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Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
8000
dI0/dt
dIrec/dt
6000
INPUT BOOST
V23990-P629-L59-PM
preliminary datasheet
BOOST FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
8000
6000
BOOST FWD
dI0/dt
dIrec/dt
4000
4000
2000
2000
0
0
20
40
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
700
V
15
V
4
â¦
60
I C (A) 80
0
0
16
32
48
At
Tj =
VR =
IF =
VGS =
25/125 °C
700
V
24
A
15
V
Figure 19
IGBT/MOSFET transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
BOOST IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
64 R Gon ( â¦) 80
BOOST FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,84
K/W
IGBT thermal model values
R (C/W)
0,107
0,391
0,223
0,092
0,030
Tau (s)
1,413
0,188
0,056
0,011
0,001
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,07
K/W
FWD thermal model values
R (C/W)
0,027
0,098
0,284
0,405
0,171
Tau (s)
8,145
1,332
0,228
0,069
0,014
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s)
10110
copyright Vincotech
10
Revision: 1
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