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| V23990-K229-A41-PM Datasheet, PDF (9/18 Pages) Vincotech – Trench Fieldstop IGBT4 technology | |||
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V23990-K229-A41-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
1000
dI0/dt
dIrec/dt
800
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
3500
2800
D1,D2,D3,D4,D5,D6,D7 FWD
dI0/dt
dIrec/dt
600
dIo/dtLow T
2100
di0/dtHigh T
400
1400
200
dIrec/dtHigh T
dIrec/dtLow T
0
0
10
20
30
40
I C (A) 50
700
Tj = 25°C
Tj = Tjmax - 25°C
dIrec/dtHigh T
0
0
30
60
90
120 R gon ( ⦠) 150
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
32
â¦
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
25
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
D1,D2,D3,D4,D5,D6,D7 FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,2
K/W
IGBT thermal model values
R (C/W)
0,03
0,13
0,45
0,24
0,15
0,06
Tau (s)
5,7E+00
8,1E-01
1,6E-01
4,9E-02
1,0E-02
9,8E-04
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,52
K/W
FWD thermal model values
R (C/W)
0,03
0,22
0,63
0,37
0,17
0,10
Tau (s)
9,3E+00
7,6E-01
1,5E-01
3,0E-02
4,4E-03
6,5E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 10110
copyright Vincotech
9
Revision: 4.1
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