V23990-K229-A41-PM Datasheet, PDF (8/18 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-K229-A41-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
D1,D2,D3,D4,D5,D6,D7 FWD
5
Q_rr
T_j = T_jmax -25°C
4
3
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
D1,D2,D3,D4,D5,D6,D7 FWD
5
4
T_j = T_jmax -25°C
Q_rr
3
2
Q_rr
2
T_j = 25°C
1
1
T_j = 25°C
Q_rr
0
At ⁰
0
10
20
30
40
I C (A) 50
0
30
60
90
120 R g on ( Ω) 150
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
32
Ω
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
25
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
25
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
50
D1,D2,D3,D4,D5,D6,D7 FWD
20
T_j = T_jmax -25°C
15
T_j = 25°C
10
5
0
0
10
20
30
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
32
Ω
I_RRM
I_RRM
40 I C (A)
50
40
30
20
10
0
0
At
T_j =
V_R =
I_F =
V_GE =
T_j = T_jmax - 25°C
T_j = 25°C
30
60
90
25/150 °C
600
V
25
A
±15
V
I_RRM
120 R gon ( Ω ) 150
copyright Vincotech
8
Revision: 4.1