V23990-K229-A41-PM Datasheet, PDF (6/18 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-K229-A41-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
8
6
4
2
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
8
6
4
2
0
0
0
10
20
30
40
I C (A)
50
0
30
60
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/150 °C
600
V
±15
V
32
Ω
32
Ω
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/150 °C
600
V
±15
V
25
A
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
90
120 R G ( Ω ) 150
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_C)
2
T1,T2,T3,T4,T5,T6,T7 IGBT
T_j = T_jmax -25°C
E_rec
1,6
1,2
0,8
T_j = 25°C
E_rec
0,4
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
2
T1,T2,T3,T4,T5,T6,T7 IGBT
1,6
T_j = T_jmax -25°C
1,2
E_rec
0,8
T_j = 25°C
E_rec
0,4
0
0
0
10
20
30
40
I C (A) 50
0
30
60
90
120
R G ( Ω ) 150
With an inductive load at
T_j =
25/150 °C
V_CE =
600
V
V_GE =
±15
V
R_gon =
32
Ω
With an inductive load at
T_j =
25/150 °C
V_CE =
600
V
V_GE =
±15
V
I_C =
25
A
copyright Vincotech
6
Revision: 4.1