 English |
|
|
|
|
|
|
|
| 10-FZ12NMA080SH01-M260F Datasheet, PDF (9/27 Pages) Vincotech – Mixed voltage component topology | |||
| |||
| ◁ |
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
12000
dIrec/dt T
di0/dt T
10000
8000
6000
4000
2000
10-FZ12NMA080SH01-M260F
10-PZ12NMA080SH01-M260FY
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
14000
12000
dIrec/dt T
dI0/dt T
FWD
10000
8000
6000
4000
2000
0
0
0
20
40
60
80
I C (A) 100
0
5
10
At
Tj =
V CE =
V GE =
R gon =
25/125 °C
350
V
±15
V
4
â¦
At
Tj =
VR =
IF =
V GE =
25/125 °C
350
V
56
A
±15
V
15
20
R gon ( â¦)
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
FWD
100
100
D = 0,5
D = 0,5
10-1
0,2
0,1
10-1
0,2
0,1
0,05
0,05
0,02
0,01
0,005
0,02
0,01
0,005
0.000
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
t p (s)
10110
10-5
10-4
10-3
10-2
10-1
100
t p (s) 10110
At
D=
R = thJH
tp / T
0,60
K/W
At
D=
R thJH =
tp / T
1,63
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
0,10
0,23
0,21
0,05
0,01
Tau (s)
1,8E+00
2,9E-01
1,0E-01
1,4E-02
1,7E-03
R (K/W)
0,07
0,17
0,65
0,51
0,13
0,11
Tau (s)
5,7E+00
1,2E+00
2,0E-01
6,6E-02
9,1E-03
1,5E-03
copyright Vincotech
9
13 May. 2015 / Revision 10
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese