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| 10-FZ12NMA080SH01-M260F Datasheet, PDF (16/27 Pages) Vincotech – Mixed voltage component topology | |||
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Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
10000
dIrec/dt T
dIo/dt T
8000
6000
4000
2000
10-FZ12NMA080SH01-M260F
10-PZ12NMA080SH01-M260FY
datasheet
Neutral point
Neutral Point IGBT and Half Bridge FWD
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
12000
10000
FWD
dIrec/dt T
dI0/dt T
8000
6000
4000
2000
0
0
20
40
60
At
Tj =
V CE =
V GE =
R gon =
25/125 °C
350
V
±15
V
4
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
80
I C (A) 100
IGBT
0
0
5
10
At
Tj =
VR =
IF =
V GE =
25/125 °C
350
V
56
A
±15
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
15
R gon ( â¦)
20
FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
R thJH =
tp / T
1,32
K/W
IGBT thermal model values
R (K/W)
0,06
0,17
0,35
0,60
0,13
Tau (s)
6,4E+00
1,3E+00
2,5E-01
8,5E-02
8,9E-03
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100
t p (s) 101 10
10-5
10-4
10-3
10-2
At
D=
R thJH =
tp / T
1,21
K/W
FWD thermal model values
R (K/W)
0,03
0,11
0,34
0,54
0,14
0,05
Tau (s)
6,2E+00
1,1E+00
2,0E-01
6,8E-02
1,2E-02
2,8E-03
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 101 10
copyright Vincotech
16
13 May. 2015 / Revision 10
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