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10-FZ12NMA080SH01-M260F Datasheet, PDF (3/27 Pages) Vincotech – Mixed voltage component topology
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10-FZ12NMA080SH01-M260F
10-PZ12NMA080SH01-M260FY
datasheet
Parameter
Symbol
Characteristic Values
Conditions
V GE [V] or
V GS [V]
V r [V]
or
V CE [V] or
V DS [V]
I C [A] or
I F [A] or
I D [A]
Tj
Value
Unit
Min
Typ
Max
Half Bridge IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss
Turn-off energy loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
V GE(th) VCE=VGE
V CEsat
I CES
I GES
R gint
t d(on)
tr
t d(off)
tf
Rgoff=4 Ω
Rgon=4 Ω
E on
E off
C ies
C oss f=1MHz
C rss
QG
R th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
15
0
20
±15
0
±15
1200
0
350
25
960
0,003
80
56
80
Tj=25°C
5,2
Tj=125°C
Tj=25°C
1,7
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
5,8
1,99
2,33
none
77
78
12
16
173
225
49
67
0,46
0,96
1,34
2,24
4660
300
260
370
6,4
2,5
0,02
240
V
V
mA
nA
Ω
ns
mWs
pF
nC
0,60
K/W
Neutral Point FWD
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink
VF
60
Ir
600
t rr
Q rr
Rgon=4 Ω
±15
350
56
( di rf/dt )max
E rec
R th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,27
2,8
1,68
V
64
83
A
29
74
ns
1
3
µC
8651
3565
A/µs
0,18
0,53
mWs
1,63
K/W
copyright Vincotech
3
13 May. 2015 / Revision 10
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