10-FZ12NMA080SH01-M260F Datasheet, PDF (8/27 Pages) Vincotech – Mixed voltage component topology

Figure 13
Typical reverse recovery charge as a
function of collector current
Q _rr = f(I _C)
4
10-FZ12NMA080SH01-M260F
10-PZ12NMA080SH01-M260FY
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q _rr = f(R _gon)
FWD
4
Q_{rr High T}
3
2
1
0
0
At
20
40
60
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
350
V
±15
V
4
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I _RRM = f(I _C)
100
80
60
40
20
3
2
Q_{rr Low T}
1
0
80
I C (A) 100
0
5
10
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
350
V
56
A
±15
V
Q_{rr High T}
Q_{rr Low T}
15
R gon ( Ω )
20
FWD
I_{RRM High T}
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I _RRM = f(R _gon)
100
80
60
40
20
FWD
I_{RRM High T}
I_{RRM Low T}
0
0
0
20
40
60
80
I C (A) ¹⁰⁰
0
5
10
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
350
V
±15
V
4
Ω
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
350
V
56
A
±15
V
15
R gon ( Ω)
20
copyright Vincotech
8
13 May. 2015 / Revision 10