10-FZ073BA030SM02-M575L38 Datasheet, PDF (9/18 Pages) Vincotech – High efficient triple booster

10-FZ073BA030SM02-M575L38
datasheet
Boost Switching Characteristics
Figure 1.
Typical swit ching energy losses as a f unction of collector current
E = f(I C)
1
0,75
IGBT
E_on
E_on
Figure 2.
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(rg)
1,2
0,9
0,5
0,25
0,6
E_off
E_off
0,3
IGBT
E_on
E_{o n}
E_{o ff}
E_off
0
0
10
20
With an induc tive load at
V CE =
400
V
V GE =
15/0
V
R gon =
16
Ω
R goff =
16
Ω
30
T j:
40
50
60
I_C (A)
25 °C
125 °C
150 °C
Figure 3.
Typical reverse recovered energy loss as a f unction of collector current
E rec = f(I c)
0,6
FWD
E_rec
0,45
0,3
0
0
16
32
With an inductive load at
V CE =
400
V
V GE =
15/0
V
IC =
30
A
48
T j:
64
25 °C
125 °C
150 °C
R_g ( Ω) ⁸⁰
Figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E rec = f(r g )
0,3
FWD
0,225
0,15
E_rec
0,15
0
0
10
20
With an induc tive load at
V CE =
400
V
V GE =
15/0
V
R gon =
16
Ω
30
T j:
E_rec
40
50
60
I C (A)
25 °C
125 °C
150 °C
0,075
0
0
16
32
With an inductive load at
V CE =
400
V
V GE =
15/0
V
IC =
30
A
E_rec
48
64
25 °C
T j:
125 °C
150 °C
80
r_g (Ω)
Copyright Vincotech
9
24 Jul. 2015 / Revision 1