10-FZ073BA030SM02-M575L38 Datasheet, PDF (13/18 Pages) Vincotech – High efficient triple booster

10-FZ073BA030SM02-M575L38
datasheet
Boost Switching Definitions
General conditions
Tj
R gon
= 125 °C
= 16 Ω
R goff
= 16 Ω
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
125
%
t_doff
V_CE
100
V_{GE 90%}
V_{CE 90%}
75
V_GE
I_C
50
25
t_Eoff
I_{C 1%}
0
-25
-0,15
-0,08
-0,01
0,06
0,13
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t doff =
t Eoff =
Figure 3.
0
V
15
V
400
V
30
A
0,175
µs
0,216
µs
Turn-of f Swit ching Wavef orms & def init ion of t f
125
%
I_C
100
fitted
75
I_{C 90%}
I_{C 60%}
50
I_{C 40%}
25
I_C10%
0
-25
0,07
0,09
0,11
t_f
0,13
0,15
V C (100%) =
I C (100%) =
tf =
400
V
30
A
0,005
µs
0,2
0,27
t (µs)
IGBT
V_CE
0,17
0,19
t ( µs)
Figure 2.
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
250
%
I_C
200
IGBT
150
V_CE
100
50
t_don
V_{GE 10%}
0
I_{C 10%}
-50
2,95
2,99
t_Eon
3,03
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t don =
t Eon =
Figure 4.
0
V
15
V
400
V
30
A
0,021
µs
0,118
µs
Turn-on Swit ching Wavef orms & def init ion of tr
250
%
I_C
200
V_GE
V_{CE 3%}
3,07
3,11
3,15
t (µs)
IGBT
150
V_CE
100
50
0
I_{C 90%}
t_r
I_{C 10%}
-50
2,95
V C (100%) =
I C (100%) =
tr =
2,98
3,01
400
30
0,008
3,04
V
A
µs
3,07
3,1
3,13
t (µs)
Copyright Vincotech
13
24 Jul. 2015 / Revision 1