10-FZ073BA030SM02-M575L38 Datasheet, PDF (11/18 Pages) Vincotech – High efficient triple booster

10-FZ073BA030SM02-M575L38
datasheet
Boost Switching Characteristics
Figure 9.
Typical recovered charge as a f unction of collector current
Q r = f(I C)
2
1,5
FWD
Q_r
Figure 10.
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(R gon)
1,2
0,9
FWD
Q_r
1
0,6
0,5
At
0
0
10
At
V CE =
400
V GE =
15/0
R gon =
16
20
V
V
Ω
Q_r
30
T j:
40
50
60
I C (A)
25 °C
125 °C
150 °C
Figure 11.
Typical peak reverse recovery current current as a f unct ion of collect or current
I RM = f(I C)
50
40
30
FWD
I_RM
I_RM
20
10
0
0
At
V CE =
V GE =
R gon =
10
400
15/0
16
20
V
V
Ω
30
T j:
40
50
60
I C (A)
25 °C
125 °C
150 °C
0,3
Q_r
0
0
16
32
At
VCE=
400
V
V GE =
15/0
V
I C=
30
A
48
64
25 °C
T j:
125 °C
150 °C
80
Rgon (Ω)
Figure 12.
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(R gon)
60
FWD
45
30
15
0
0
16
32
At
V CE =
400
V
V GE =
15/0
V
IC =
30
A
I_RM
I_RM
48
64
25 °C
T j:
125 °C
150 °C
80
R go n (Ω)
Copyright Vincotech
11
24 Jul. 2015 / Revision 1