10-FZ073BA030SM02-M575L38 Datasheet, PDF (10/18 Pages) Vincotech – High efficient triple booster

10-FZ073BA030SM02-M575L38
datasheet
Boost Switching Characteristics
Figure 5.
Typical swit ching t imes as a f unct ion of collector current
t = f(I C)
1
IGBT
Figure 6.
Typical swit ching t imes as a f unct ion of gate resistor
t = f(r g)
1
t_{d(off )}
0,1
0,1
t_d(on)
0,01
t_r
0,01
t_f
IGBT
t_{d(off )}
t_d(on)
t_r
t_f
0,001
0
10
20
30
40
With an induc tive load at
Tj=
125
°C
V CE =
400
V
V GE =
15/0
V
R gon =
16
Ω
R goff =
16
Ω
Figure 7.
Typical reverse recovery t ime as a f unction of collector current
t rr = f(I C)
0,12
0,09
50
60
I _C (A)
FWD
t_rr
0,001
0
16
32
48
With an inductive load at
Tj=
125
°C
V CE =
400
V
V GE =
15/0
V
IC =
30
A
Figure 8.
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(R gon)
0,16
0,12
64
80
r_g (Ω)
FWD
t_rr
0,06
0,03
0
0
10
At
V CE= 400
V GE =
15/0
R gon =
16
20
V
V
Ω
t_rr
30
T j:
40
25 °C
125 °C
150 °C
50
60
I_C (A)
0,08
t_rr
0,04
0
0
16
32
At
V CE =
400
V
V GE =
15/0
V
IC =
30
A
48
64
25 °C
Tj:
125 °C
150 °C
80
R_{g on} (Ω)
Copyright Vincotech
10
24 Jul. 2015 / Revision 1