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| V23990-K201-A-PM Datasheet, PDF (8/17 Pages) Vincotech – Trench Fieldstop IGBT3 technology | |||
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V23990-K201-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
600
dI0/dt
500
dIrec/dt
400
300
200
100
0
0
2
4
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
300
V
15
V
64
â¦
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
800
D1,D2,D3,D4,D5,D6,D7 FWD
dI0/dt
dIrec/dt
600
400
200
0
6
8
I C (A) 10
0
90
At
Tj =
VR =
IF =
VGE =
25/125 °C
300
V
6
A
15
V
180
R gon ( ⦠) 270
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
D1,D2,D3,D4,D5,D6,D7 FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
2,40
K/W
IGBT thermal model values
R (K/W)
0,08
0,18
0,82
0,59
0,43
0,30
Tau (s)
9,7E+00
4,8E-01
7,5E-02
1,5E-02
2,9E-03
3,0E-04
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
3,00
K/W
FWD thermal model values
R (K/W)
0,17
0,87
0,95
0,56
0,50
Tau (s)
1,2E+00
1,1E-01
2,6E-02
4,6E-03
8,4E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 10110
copyright Vincotech
8
Revision: 3
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