V23990-K201-A-PM Datasheet, PDF (5/17 Pages) Vincotech – Trench Fieldstop IGBT3 technology

V23990-K201-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
0,5
0,4
0,3
0,2
0,1
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
0,5
0,4
0,3
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{on Low T}
0,2
E_{off High T}
E_{off Low T}
0,1
0
0
0
2
4
6
8
10 I C (A) 12
0
90
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
300
V
15
V
64
Ω
32
Ω
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
300
V
15
V
6
A
180
R G ( Ω ) 270
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_C)
0,25
T1,T2,T3,T4,T5,T6,T7 IGBT
E_rec
0,2
T_j = T_jmax -25°C
0,15
E_rec
T_j = 25°C
0,1
0,05
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,2
T1,T2,T3,T4,T5,T6,T7 IGBT
0,16
T_j = T_jmax -25°C
E_rec
0,12
0,08
T_j = 25°C
E_rec
0,04
0
0
0
2
4
6
8
10 I C (A) 12
0
90
With an inductive load at
T_j =
25/125 °C
V_CE =
300
V
V_GE =
15
V
R_gon =
64
Ω
With an inductive load at
T_j =
25/125 °C
V_CE =
300
V
V_GE =
15
V
I_C =
6
A
180
R G ( Ω ) 270
copyright Vincotech
5
Revision: 3