V23990-K201-A-PM Datasheet, PDF (7/17 Pages) Vincotech – Trench Fieldstop IGBT3 technology

V23990-K201-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
D1,D2,D3,D4,D5,D6,D7 FWD
1,2
Q_rr
1
T_j = T_jmax -25°C
0,8
Q_rr
0,6
T_j = 25°C
0,4
0,2
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
D1,D2,D3,D4,D5,D6,D7 FWD
0,8
Q_rr
T_j = T_jmax -25°C
0,6
T_j = 25°C
Q_rr
0,4
0,2
0
0
At ⁰
2
4
6
8
10 I C (A) 12
0
90
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
300
V
15
V
64
Ω
T_j =
V_R =
I_F =
V_GE =
25/125 °C
300
V
6
A
15
V
180
R g on ( Ω) 270
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
8
T_j = T_jmax -25°C
6
T_j = 25°C
D1,D2,D3,D4,D5,D6,D7 FWD
I_RRM
I_RRM
4
2
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
10
D1,D2,D3,D4,D5,D6,D7 FWD
8
T_j = T_jmax - 25°C
6
I_RRM
T_j = 25°C
I_RRM
4
2
0
0
0
2
4
6
8
10 I C (A) 12
0
90
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
300
V
15
V
64
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
300
V
6
A
15
V
180
R gon ( Ω ) 270
copyright Vincotech
7
Revision: 3